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FCV

Gate dielectrics characterization and resistivity monitoring with site-based measurements
(typically 5 or 9 points per wafer according to SEMI standard testing patterns).
Specially designed probe ensures that no damage is done to the wafer, because the probe is not contaminating the wafer surfaces.

Features and System specifications:

  •Elastic metal probe does not damage the dielectric surface

  •Hard metal probe for 1-pin measurements and a hard metal probe pair for 2-pin               measurements are also available which gives a more precise positioning.

  •Measurements down to 1 mm edge exclusion

  •One or dual load ports

  •Automated wafer handling for 200 and 300 mm wafers

  •OHT capability option

  •Easy to learn and use SAM User Interface running under Windows-based operation             system

  •Easy transfer of data over fab networks with common networking software.

Probe movement, wafer motion, cassette loading or uploading, and wafer pretreatment are controlled by an internal computer according to user-defined stored recipes.  


Measurement Capabilities:

  •C-V measurement

  •I-V measurement

  •Ramped Current Stress Test (RCST)

  •Constant Current Stress Test (CCST)

  •Ramped Voltage Stress Test (RVST)

  •Constant Voltage Stress Test (CVST)