Rapid non-contact and non-destructive FTIR inspection system (configured with reflection and transmission measurement option) for epitaxial thickness, dielectric composition and high dopant concentration measurement for wafer maker and IC manufacturer industry.

The Semilab AMS IR family of products uses proprietary model-based infrared reflectometry to measure thickness, depth and parameters of etched and recess filled trench structures with nanometer precision. It can also measure epitaxial layer thickness with angstrom precision even at 30 nm and below.

The SEIR uses proprietary model-based infrared reflectometry (MBIR) and Spectroscopic Ellipsome-try (SE) technology to deliver high throughput, low COO, non-contact, non-destructive measurements of the 3D geometry structures and uniformity of doped epitaxial layers and films used in integrated circuit manufacturing. The small spotsize makes the tool suitable for measurements of scribeline test structures. The unique hybrid SE-IR technology and analysis capability of the SEIR enables measurement capability of challenging structures and film stacks.

En-Vision is a new generation inspection system specifically targeting quick and non-destructive detection of nm scale buried defects. Buried defects are located under the silicon surface, invisible to conventional inspection tools (Optical / SEM), and when occurring in the active areas impact device performance and yield.

The PMR system provides a non-contact optical method for in-line monitoring of ion implantation processes of silicon product wafers for various device process flow types in the memory, automotive or power device industries.

All Semilab's MCV systems are equipped with automated, full hand-off, mercury handling system to increase safety and reliability. The user friendly software environment controls the measurements and also offers a great flexibility for detailed analysis of the measured structures. Full map capability up to 12"/300 mm. All features listed, including optional ones, are compatible with both the manual MCV-530(L) and the automatic
MCV-2200/2500/3000/3000P systems.

Explore the entire carrier density and resistivity profile in all silicon semiconductor structures of device processing with this automated system. Measurement range covers state-of-the art application needs.

Gate dielectrics characterization and resistivity monitoring with site-based measurements
(typically 5 or 9 points per wafer according to SEMI standard testing patterns).
Specially designed probe ensures that no damage is done to the wafer, because the probe is not contaminating the wafer surfaces.

4 Point Probe (multiple heads) & Non-contact probes (JPV & EDDY) combined in one platform for better operability and long-term stability for wafer makers, device manufacturers and implanter suppliers.

Semilab’s QC platforms (Near Surface Doping Mappers) for epitaxial monitoring are the only non-contact, non-destructive, high throughput systems that can reliably map near surface doping on process wafers.