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Hyper Lab

  • Nano surface characterization
    In the semiconductor industry, the topographical characteristics of surfaces serve as crucial indicators for identifying potential failure points and estimating success rates to enhance overall process yield. Consequently, the examination of even the tiniest surface features on silicon substrates and patterned wafers is a prevalent practice across various applications within the industry.
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    The maximum magnification achievable with a conventional optical microscope is limited to about 800-1000× due to the properties of light. For higher magnification, Scanning Electron Microscopes (SEMs) are typically used, with Transmission Electron Microscopes (TEMs) providing the highest magnification, even down to single atoms.
    However, the Scanning Probe Microscope (SPM) serves a unique purpose for several reasons:
    1.Preservation of Samples: TEMs require thin slicing of samples, often damaging them in the process. SPM, on the other hand, images surface structures at the atomic level without harming the sample.
    2.Three-Dimensional Imaging: SPM microscopes provide three-dimensional imaging, even when evaluating two-dimensional information. In contrast, electron microscopes struggle to investigate a sample's surface structure effectively.
    3.Non-Vacuum Operation: SPM operates in ambient conditions, unlike electron and optical microscopes that require a vacuum environment.
    4.Measurement of Physical Properties: SPM can measure various physical properties, including electrical properties (e.g., Kelvin probe force microscopy, KPM/KPFM) and magnetic properties (Magnetic force microscopy, MFM). This versatility sets it apart from other microscopes.
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  • Correlative microscopy
    Semiconductor devices often consist of complex heterostructures, involving different materials and layering techniques. The electronic properties at these layer interfaces are critical for device performance, but they can be influenced by unpredictable factors.
    Here, we introduce a powerful method using organic solar cells as an example to analyze these heterostructure interfaces in real-time. Developed by Saive et al. [1], this method uses Scanning Kelvin Probe Force Microscopy (SKPM) for electrical characterization. SKPM provides high-resolution work function measurements between layers, allowing for direct voltage drop measurements.
    Organic semiconductors are sensitive to air exposure, so our approach uses airtight containers. By combining the Carl Zeiss AURIGA crossbeam work station with the Carl Zeiss AFM option for MERLIN, we can prepare and investigate solar cells without exposing them to air.
    This method provides nanometer-level insights into surface topography, mechanical, electrical, and magnetic properties, enhancing our understanding of complex semiconductor interfaces.
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    Why to combine Atomic Force Microscopy (AFM) with Scanning Electron Microscope (SEM)?
    A combined SEM-AFM has a number of advantages in comparison to the two systems as stand-alone. The system offers new possibilities for measuring surfaces and nanostructures. The combination of SEM and AFM offers an exact positioning of the AFM tip. The AFM gives you precise information about topography, electrical and mechanical properties of the surface.
    APPLICATIONS:
    -Surface properties analyzation like:
    -Magnetic force on the sample surface  
    -Chemical surface potential by Kelvin Probe Force Microscopy (KPFM)
    -Conductivity of the surface and many more

    -Potential distribution along the layer structure of an SMD capacitor
    -Topographical and electrical properties
    -Potential diffence between the two electrode materials
    -Graphene and other 2D materials

    -Characterization of:
    -Heterogenic structures of nanosized devices and functional structures in semiconductor
    -Energy storage
    -Sustainable energy production
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  • Nanoindentation
    Nanoindentation plays a pivotal role in uncovering the quantitative mechanical characteristics of minute material volumes. This technique has become a firmly established method for assessing the elastic, plastic, and viscoelastic properties of a wide range of materials, including hard thin films, multi-phase metals, ceramics, soft films, semiconductors, biological materials, and plastics, all at a scale ranging from microns to nanometers.
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    A nanoindentation test offers precise load-displacement curves for examining various surfaces, including both soft and hard materials, as well as rough surfaces generated through industrial processes like thermal spray coatings. It quantitatively measures the mechanical properties of small material volumes. While thin films, multi-phase metals, ceramics, and biological materials are the primary applications for such instruments, they can also be used to perform viscoelastic measurements on polymers, conduct flexure testing of MEMS devices, and tackle any mechanical measurements on a sub-micron scale. The properties typically measured include elastic modulus, hardness, yield strength, and, depending on the sample, storage and loss moduli, fracture toughness, scratch resistance, and wear properties.
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  • Parallel Dipole Line Hall Measurement
    The PDL Hall system offers the versatility of performing both AC and DC Hall measurements. The AC field measurement mode is particularly advantageous when dealing with materials having a mobility below 0.1 cm²/Vs. Such materials are typically found in semiconductor, photovoltaic, or thermoelectric applications.
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    Hall measurements are crucial for electronic materials and devices, but they can be challenging or impossible for materials with low mobility, very thin films (high resistance), or very low resistance (e.g., metals) due to the extremely low signal-to-noise ratio.
    To address this issue, the Parallel Dipole Line (PDL) system introduces an innovative magnetic trap system with a unique "camelback field confinement" effect. This system traps diamagnetic materials (e.g., graphite) at the center using diamagnetic levitation.
    Semilab's Parallel Dipole Line Hall Measurement System (PDL-1000) utilizes this technology to measure sheet resistance, carrier concentration, and mobility across wide ranges with high sensitivity for R&D applications.
    It's worth noting that the PDL Hall effect technique incorporated in the SEMILAB PDL-1000 system was developed and patented by IBM.
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