Features and System specifications:

Benefits:

  •Non-destructive optical technique, based on measurement of the change of the polarisation state of light after reflection at non normal incidence on the surface to study.

  •It is a highly sensitive even for layer thickness below 1 nm

  •Extremely versatile technique: it gives acccess to numerous parameters which characterize multilayer structures (eg. layer thickness, refractive index, absorption, porosity).

Applications:

  •Thin film dielectric or semiconductor layer stack on solid polished surface substrate is the main target of applications.

Pattern-capable Spectroscopic Ellipsometry:

  •On high-performance silicon CMOS or III/V devices

  •After deposition and etch processes

  •Measurement capability of product wafers in <50μm patterned test areas

OLED display applications:

  •Multilayer characterization

  •Thickness, n, k measurement

  •Thickness map within sub-pixels

More than Moore (MtM) industrial applications:

  •Compound materials measurements:

  •AlGaN, GaN, GaAsOx,

  •SiGe, Poly-Si with Raman extension

  •Graphene, CNT

  •Periodic thick layers definition