Features and System specifications:

Benefits

•Non-destructive optical technique, based on measurement of the change of the polarisation state of light after reflection at non normal incidence on the surface to study.

•It is a highly sensitive even for layer thickness below 1 nm

•Extremely versatile technique: it gives acccess to numerous parameters which characterize multilayer structures (eg. layer thickness, refractive index, absorption, porosity).

Applications

•Thin film dielectric or semiconductor layer stack on solid polished surface substrate is the main target of applications.

Pattern-capable Spectroscopic Ellipsometry

•On high-performance silicon CMOS or III/V devices

•After deposition and etch processes

Measurement capability of product wafers in <50μm patterned test areas OLED display applications

•Multilayer characterization

•Thickness, n, k measurement

•Thickness map within sub-pixels

More than Moore (MtM) industrial applications

•Compound materials measurements:

•AlGaN, GaN, GaAsOx,

•SiGe, Poly-Si with Raman extension

•Graphene, CNT

•Periodic thick layers definition