Features and System specifications:

Benefits:

•Non-destructive optical technique, based on measurement of the change of the polarisation state of light after reflection at non normal incidence on the surface to study.

•It is a highly sensitive even for layer thickness below 1 nm

•Extremely versatile technique: it gives acccess to numerous parameters which characterize multilayer structures (eg. layer thickness, refractive index, absorption, porosity).

Applications:

•Thin film dielectric or semiconductor layer stack on solid polished surface substrate is the main target of applications.

Pattern-capable Spectroscopic Ellipsometry:

•On high-performance silicon CMOS or III/V devices

•After deposition and etch processes

•Measurement capability of product wafers in <50μm patterned test areas

OLED display applications:

•Multilayer characterization

•Thickness, n, k measurement

•Thickness map within sub-pixels

More than Moore (MtM) industrial applications:

•Compound materials measurements:

•AlGaN, GaN, GaAsOx,

•SiGe, Poly-Si with Raman extension

•Graphene, CNT

•Periodic thick layers definition