Features and System specifications:

Benefits

Non-destructive optical technique, based on measurement of the change of the polarisation state of light after reflection at non normal incidence on the surface to study.

It is a highly sensitive even for layer thickness below 1 nm

Extremely versatile technique: it gives acccess to numerous parameters which characterize multilayer structures (eg. layer thickness, refractive index, absorption, porosity).

Applications

Thin film dielectric or semiconductor layer stack on solid polished surface substrate is the main target of applications.

Pattern-capable Spectroscopic Ellipsometry

On high-performance silicon CMOS or III/V devices

After deposition and etch processes

Measurement capability of product wafers in <50μm patterned test areas

OLED display applications

Multilayer characterization

Thickness, n, k measurement

Thickness map within sub-pixels

More than Moore (MtM) industrial applications

Compound materials measurements:

AlGaN, GaN, GaAsOx,

SiGe, Poly-Si with Raman extension

Graphene, CNT

Periodic thick layers definition