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FCV

게이트 다이렉트릭 특성 평가 및 저항률 모니터링을 사이트 기반 측정으로 수행하며 (일반적으로 SEMI 표준 테스트 패턴에 따라 웨이퍼 당 5개 또는 9개의 지점), 웨이퍼 표면에 오염물질을 더하지 않도록 특별히 설계된 프로브가 웨이퍼에 손상을 입히지 않도록 보장합니다.

Features and System specifications:

•Elastic metal probe does not damage the dielectric surface

•Hard metal probe for 1-pin measurements and a hard metal probe pair for 2-pin measurements are also available which gives a more precise positioning.

•Measurements down to 1 mm edge exclusion

•One or dual load ports

•Automated wafer handling for 200 and 300 mm wafers

•OHT capability option

•Easy to learn and use SAM User Interface running under Windows-based operation system

•Easy transfer of data over fab networks with common networking software.


Probe movement, wafer motion, cassette loading or uploading, and wafer pretreatment are controlled by an internal computer according to user-defined stored recipes.  


Measurement Capabilities:

•C-V measurement

•I-V measurement

•Ramped Current Stress Test (RCST)

•Constant Current Stress Test (CCST)

•Ramped Voltage Stress Test (RVST)

•Constant Voltage Stress Test (CVST)